• 专利附录
  • 专利说明
  • 权利要求
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    • 专利摘要:
    The present invention relates to an X-ray mask used in the manufacture of special gates such as tee-type and gamma-type gates required for the development of GaAs HEMTs devices, and a method of manufacturing the same. Conventionally, when manufacturing a tee-type gate using an X-ray mask, a footprint of the tee-type gate is first formed through X-ray lithography, and then lithography is performed by forming a head portion by optical lithography. There is a problem in that the procedure is not easy, such as to perform again. Therefore, the present invention adjusts the X-ray transmittance by varying the thickness of the X-ray absorber corresponding to the foot printer portion and the X-ray absorber corresponding to the head portion, so that these X-ray absorbers are simultaneously present on the mask substrate. By fabricating an X-ray mask, a single X-ray lithography enables the creation of special gates, such as tee and gamma gates, on the wafer.
    公开号:KR19990033158A
    申请号:KR1019970054427
    申请日:1997-10-23
    公开日:1999-05-15
    发明作者:최상수；유형준；정해빈
    申请人:정선종；한국전자통신연구원；
    IPC主号:
    专利说明:

    Х-sun mask and manufacturing method thereof
    The present invention relates to an X-ray mask used when exposing an X-ray to a mask pattern and transferring a shape corresponding to the mask pattern onto a wafer surface, and a method of manufacturing the same, and more particularly to the development of GaAs HEMTs devices. The present invention relates to an X-ray mask used for manufacturing a special gate such as a tee and a gamma gate, and a method of manufacturing the same.
    A manufacturing process of a general X-ray mask is briefly described with reference to FIGS. 1A to 1D as follows.
    After the X-ray transmissive members 12A and 12B are formed on and under the mask substrate 11 made of silicon, the lower X-ray transmissive member 12B and the mask are exposed so that a portion of the upper X-ray transmissive member 12A is exposed. A portion of the substrate 11 is removed and a resist 13 is applied onto the upper X-ray transmissive body 12A (FIG. 1A). The exposed upper X-ray transmissive portion 12A becomes a membrane 14. The membrane 14 is formed to a thickness of about 2 μm so that X-rays are well transmitted.
    The resist 13 is exposed to light and developed using an electron beam to form a resist pattern 13A on the membrane 14 (FIG. 1B).
    The X-ray absorber 15 is grown on the membrane 14 exposed between the resist patterns 13A by electroplating (FIG. 1C).
    After removing the resist 13, a Pyrex ring (16) is formed along the edge of the lower X-ray transmissive body 12B to complete the X-ray mask (FIG. 1D). The Pyrex ring 16 serves as a mechanically strong support.
    A typical X-ray mask, as described above, includes a mask substrate 11 made of silicon, a Pyrex ring 16 serving as a mechanically strong support, a membrane 14 and X-rays that transmit X-rays well. It consists of an X-ray absorber 15 which absorbs well. However, the portion of the membrane 14 with the X-ray absorber 15 does not transmit X-rays at all, and the portion of the membrane 14 without the X-ray absorber 15 transmits all X-rays. When a special gate such as a tee gate is manufactured using such an X-ray mask, a footprint of the tee gate is first formed through X-ray lithography, and then headed by optical lithography. There is a problem that the process procedure is not easy, such as performing lithography again to form the part.
    Accordingly, an object of the present invention is to provide an X-ray mask and a method of manufacturing the same, which can form special gates such as tee and gamma gates through one X-ray lithography through X-ray lithography.
    The X-ray mask of the present invention for achieving this purpose is a foot of a tee or gamma gate in an X-ray mask composed of a mask substrate made of silicon, a membrane, an X-ray absorber and a Pyrex ring formed on the back of the mask substrate. An X-ray absorber corresponding to the print portion and an X-ray absorber corresponding to the head portion of the tee or gamma-type gate are formed on the upper and lower portions of the membrane or stacked on the membrane. do.
    In addition, the X-ray mask manufacturing method of the present invention comprises the steps of providing a substrate on which the membrane is formed; Applying a high sensitivity resist and a low sensitivity resist to the upper and lower portions of the membrane or to be laminated on the membrane; Exposing the resists by any one of a self-aligned exposure method using an electron beam, a tee-type dose separation exposure method, and a gamma-type dose separation exposure method, and removing the exposed portion to form resist patterns; By electroplating, an X-ray absorber corresponding to the footprint portion of the tee or gamma gate and an X-ray absorber corresponding to the head portion of the tee or gamma gate are formed at the top and the bottom of the membrane, respectively. Forming a stack on top of the membrane; And after removing the resist patterns, forming a Pyrex ring on the back side of the substrate.
    1A to 1D are cross-sectional views illustrating a conventional X-ray mask manufacturing method.
    2A to 2C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a first embodiment of the present invention.
    3A to 3C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a second embodiment of the present invention.
    4A to 4C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a third embodiment of the present invention.
    5A to 5C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a fourth embodiment of the present invention.
    6A to 6C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a fifth embodiment of the present invention.
    7A to 7C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a sixth embodiment of the present invention.
    8A to 8C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a seventh embodiment of the present invention.
    9A to 9C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to an eighth embodiment of the present invention.
    10A to 10C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a ninth embodiment of the present invention.
    11A to 11C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a tenth embodiment of the present invention.
    12A to 12C are cross-sectional views illustrating an X-ray mask manufacturing method according to an eleventh embodiment of the present invention.
    13A to 13C are cross-sectional views illustrating a method for manufacturing an X-ray mask according to a twelfth embodiment of the present invention.
    <Description of Symbols for Main Parts of Drawings>
    11: Mask Substrates 12A and 12B: X-Ray Transmitters
    13: resist 13A: resist pattern
    14 Membrane 15 X-Ray Absorber
    16: pyrex ring
    21, 31, 41, 51, 61, 71, 81, 91, 101, 111, 121, and 131: membrane
    22, 32, 42, 82, 92, and 102: first positive resist
    22A, 32A, 42A, 82A, 92A and 102A: first positive resist pattern
    23, 33, 43, 83, 93, and 103: second positive resist
    23A, 33A, 43A, 83A, 93A, and 103A: second positive resist pattern
    52, 62, 72, 112, 122, and 132: first negative resist
    52A, 62A, 72A, 112A, 122A, and 132A: first negative resist pattern
    53, 63, 73, 113, 123, and 133: second negative resist
    53A, 63A, 73A, 113A, 123A, and 133A: second negative resist pattern
    24, 34, 44, 54, 64, 74, 84, 94, 104, 114, 124 and 134: first X-ray absorber
    25, 35, 45, 55, 65, 75, 85, 95, 105, 115, 125, and 135: second X-ray absorber
    Hereinafter, with reference to the accompanying drawings, the present invention will be described in detail.
    Figures depicting the embodiments of the present invention show a membrane portion and an X-ray absorber portion in a typical X-ray mask consisting of a mask substrate made of silicon, a membrane, an X-ray absorber and a Pyrex ring bonded to the back of the mask. Only the bay is shown, and the X-ray mask manufacturing process of this invention is demonstrated from the state which formed the membrane part by the conventional process.
    2A to 2C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a first embodiment of the present invention.
    Referring to FIG. 2A, a first positive resist 22 is applied over the membrane 21, and a second positive resist 23 is applied below the membrane 21. The second positive resist 23 uses a positive resist having better sensitivity to the electron beam than the first positive resist 22.
    Referring to FIG. 2B, the first and second positive resists 22 and 23 are exposed using a high voltage electron beam, and the exposed portions are removed to form the first and second positive resist patterns 22A and 23A. Since the first positive resist 22 having low sensitivity is removed only the portion directly exposed to the electron beam, a first positive resist pattern 22A having a narrow open portion is formed, and the second positive resist 23 having high sensitivity is The exposed portions are automatically removed (self-aligned exposure method) by the scattered electrons passing through the first positive resist 22 and the membrane 21 to form a second positive resist pattern 23A having a wide open portion. . When the accelerating voltage of the electron beam lithography apparatus is 40 kV or more, electron beams pass through the membrane to sufficiently transfer energy to the resist behind the membrane, causing electron scattering.
    Referring to FIG. 2C, the first X-ray absorber 24 is formed on the membrane 21 exposed to the open portion of the first positive resist pattern 22A by electroplating, and at the same time, the second positive resist pattern is formed. A second X-ray absorber 25 is formed in the membrane 21 exposed by the open portion of 23A. The first and second X-ray absorbers 24 and 25 are made of Au, Ta, W, and the like, and the thickness of each absorber 24 and 25 is such that the X-ray transmittance is about 50%. Thereafter, the first and second positive resist patterns 22A and 23A are removed, and although not shown, a Pyrex ring is formed to form an X-ray mask for forming a tee type gate of the present invention.
    3A to 3C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a second embodiment of the present invention.
    Referring to FIG. 3A, a first positive resist 32 is applied over the membrane 31, and a second positive resist 33 is applied below the membrane 31. The second positive resist 33 uses a positive resist having a higher sensitivity to the electron beam than the first positive resist 32.
    Referring to FIG. 3B, the first and second positive resists 32 and 33 are exposed using high voltage and low voltage electron beams, and the exposed portions are removed to form the first and second positive resist patterns 32A and 33A. The distribution of the high voltage and low voltage electron beams is such that the low voltage electron beam is distributed around the high voltage electron beam so as to be tee type (tee type dose separation exposure method). The first positive resist 32 having low sensitivity is not affected by the low voltage electron beam, and only the portion directly exposed to the high voltage electron beam is removed to form the first positive resist pattern 32A having a narrow open portion, and the second positive high sensitivity has high sensitivity. The resist 33 is removed by the high voltage and low voltage electron beams transmitted through the first positive resist 32 and the membrane 31 to form a second positive resist pattern 33A having a wide open portion.
    Referring to FIG. 3C, the first X-ray absorber 34 is formed on the membrane 31 exposed to the open portion of the first positive resist pattern 32A by electroplating, and at the same time, the second positive resist pattern is formed. A second X-ray absorber 35 is formed in the membrane 31 exposed to the open portion of 33A. The first and second X-ray absorbers 34 and 35 are made of Au, Ta, W, and the like, and the thickness of each absorber 34 and 35 is such that the X-ray transmittance is about 50%. Thereafter, the first and second positive resist patterns 32A and 33A are removed, and although not shown, a Pyrex ring is formed to form an X-ray mask for forming a tee type gate of the present invention.
    4A to 4C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a third embodiment of the present invention.
    Referring to FIG. 4A, a first positive resist 42 is applied over the membrane 41, and a second positive resist 43 is applied below the membrane 41. The second positive resist 43 uses a positive resist having better sensitivity to the electron beam than the first positive resist 42.
    Referring to FIG. 4B, the first and second positive resists 42 and 43 are exposed using high voltage and low voltage electron beams, and the exposed portions are removed to form the first and second positive resist patterns 42A and 43A. The distribution of the high voltage and low voltage electron beams causes the high voltage electron beam and the low voltage electron beam to be distributed side by side so as to be gamma-type (gamma-type dose separation exposure method). The first positive resist 42 having low sensitivity is not affected by the low voltage electron beam, and only the portion directly exposed to the high voltage electron beam is removed to form a first positive resist pattern 42A having a narrow open portion, and the second positive high sensitivity has a high sensitivity. The resist 43 is removed by the first positive resist 42 and the portion exposed by the high voltage and low voltage electron beams passing through the membrane 41 to form a second positive resist pattern 43A having a wide open portion.
    Referring to FIG. 4C, the first X-ray absorber 44 is formed on the membrane 41 exposed to the open portion of the first positive resist pattern 42A by electroplating, and at the same time, the second positive resist pattern is formed. A second X-ray absorber 45 is formed in the membrane 41 exposed to the open portion of 43A. The first and second X-ray absorbers 44 and 45 are made of Au, Ta, W, and the like, and the thickness of each absorber 44 and 45 is such that the X-ray transmittance is about 50%. Thereafter, the first and second positive resist patterns 42A and 43A are removed, and although not shown, a Pyrex ring is formed to form an X-ray mask for forming a gamma gate of the present invention.
    As described above, the X-ray masks according to the first, second and third embodiments of the present invention use the first and second positive resists having different sensitivity, and are self-aligned exposure method and tee-type dose-separated exposure method using an electron beam. Or a first X-ray absorber is formed on the membrane to correspond to the footprint of the tee or gamma gate, and a second X corresponding to the head of the tee or gamma gate under the membrane. The line absorber is configured to be formed. When X-rays are transmitted through such an X-ray mask, the X-ray transmittance at the portion where the first X-ray absorber, the membrane and the second X-ray absorber overlap is close to 0%, and the membrane and the second X The X-ray transmittance at the overlapped portion of the ray absorber is about 50%, and the transmittance at the membrane-only portion is close to 100%, thus forming a spatial image pattern of a tee or gamma gate on the wafer (not shown). can do. The X-ray masks according to the first, second and third embodiments of the present invention include first and second X-rays in which a portion of the tee or gamma gate directly corresponds to the footprint and head of the gate pattern. Since it is an absorber, the resist applied on the wafer to fabricate the tee or gamma gate on the actual wafer must use a negative type to obtain a tee or gamma gate resist pattern.
    5A to 5C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a fourth embodiment of the present invention.
    Referring to FIG. 5A, a first negative resist 52 is applied over the membrane 51, and a second negative resist 53 is applied below the membrane 51. The second negative resist 53 uses a negative resist having better sensitivity to the electron beam than the first negative resist 52.
    Referring to FIG. 5B, the first and second negative resists 52 and 53 are exposed using a high voltage electron beam, and the unexposed portions are removed to form the first and second negative resist patterns 52A and 53A. The first negative resist 52 having low sensitivity remains only a portion directly exposed to the electron beam to form a first negative resist pattern 52A having a narrow pattern portion, and the second negative resist 53 having high sensitivity has a first negative portion. A portion exposed automatically by the scattered electrons passing through the resist 52 and the membrane 51 (self-aligned exposure method) remains to form a second negative resist pattern 53A having a wide pattern portion. When the accelerating voltage of the electron beam lithography apparatus is 40 kV or more, electron beams pass through the membrane to sufficiently transfer energy to the resist behind the membrane, causing electron scattering.
    Referring to FIG. 5C, the first X-ray absorber 54 is formed on the exposed membrane 51 except for the portion of the first negative resist pattern 52A by electroplating, and at the same time, the second negative resist pattern 53A is formed. A second X-ray absorber 55 is formed in the exposed membrane 51 except for the () part. The first and second X-ray absorbers 54 and 55 are made of Au, Ta, W, and the like, and the thickness of each absorber 54 and 55 is such that the X-ray transmittance is about 50%. Thereafter, the first and second negative resist patterns 52A and 53A are removed, and although not shown, a Pyrex ring is formed to form an X-ray mask for forming a tee type gate of the present invention.
    6A to 6C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a fifth embodiment of the present invention.
    Referring to FIG. 6A, a first negative resist 62 is applied over the membrane 61, and a second negative resist 63 is applied below the membrane 61. The second negative resist 63 uses a negative resist having better sensitivity to the electron beam than the first negative resist 62.
    Referring to FIG. 6B, the first and second negative resists 62 and 63 are exposed using high voltage and low voltage electron beams, and the unexposed portions are removed to form the first and second negative resist patterns 62A and 63A. . The distribution of the high voltage and low voltage electron beams is such that the low voltage electron beam is distributed around the high voltage electron beam so as to be tee type (tee type dose separation exposure method). The first negative resist 62 having low sensitivity is left unaffected by the low voltage electron beam, leaving only the portion directly exposed to the high voltage electron beam to form the first negative resist pattern 62A having a narrow pattern portion, and the second negative high sensitivity having high sensitivity. The resist 63 remains a portion exposed by the high voltage and low voltage electron beams passing through the first negative resist 62 and the membrane 61 to form a second negative resist pattern 63A having a wide pattern portion.
    6C, the first X-ray absorber 64 is formed on the exposed membrane 61 except for the portion of the first negative resist pattern 62A by electroplating, and at the same time, the second negative resist pattern 63A. A second X-ray absorber 65 is formed in the exposed membrane 61 except for the part. The first and second X-ray absorbers 64 and 65 are made of Au, Ta, W, and the like, and the thickness of each absorber 64 and 65 is such that the X-ray transmittance is about 50%. Thereafter, the first and second negative resist patterns 62A and 63A are removed, and although not shown, a Pyrex ring is formed to form an X-ray mask for forming a tee type gate of the present invention.
    7A to 7C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a sixth embodiment of the present invention.
    Referring to FIG. 7A, a first negative resist 72 is applied over the membrane 71, and a second negative resist 73 is applied below the membrane 71. The second negative resist 73 uses a negative resist having better sensitivity to the electron beam than the first negative resist 72.
    Referring to FIG. 7B, the first and second negative resists 72 and 73 are exposed using high voltage and low voltage electron beams, and the unexposed portions are removed to form the first and second negative resist patterns 72A and 73A. . The distribution of the high voltage and low voltage electron beams causes the high voltage electron beam and the low voltage electron beam to be distributed side by side so as to be gamma-type (gamma-type dose separation exposure method). The first negative resist 72 having low sensitivity is left unaffected by the low voltage electron beam, leaving only the portion directly exposed to the high voltage electron beam to form the first negative resist pattern 72A having a narrow pattern portion, and the second negative high sensitivity having high sensitivity. The resist 73 remains a portion exposed by the high voltage and low voltage electron beams passing through the first negative resist 72 and the membrane 71 to form a second negative resist pattern 73A having a wide pattern portion.
    Referring to FIG. 7C, the first X-ray absorber 74 is formed on the exposed membrane 71 except for the portion of the first negative resist pattern 72A by electroplating, and at the same time, the second negative resist pattern 73A. A second X-ray absorber 75 is formed in the exposed membrane 71 except for the () part. The first and second X-ray absorbers 74 and 75 are made of Au, Ta, W, and the like, and the thickness of each absorber 74 and 75 is such that the X-ray transmittance is about 50%. Thereafter, the first and second negative resist patterns 72A and 73A are removed, and although not shown, a Pyrex ring is formed to form an X-ray mask for forming a gamma gate of the present invention.
    As described above, the X-ray masks according to the fourth, fifth and sixth embodiments of the present invention use the first and second negative resists with different sensitivity, and are self-aligned exposure method and tee-type dose-separated exposure method using electron beams. Or a first X-ray absorber is formed on the membrane to correspond to the footprint of the tee or gamma gate, and a second X corresponding to the head of the tee or gamma gate under the membrane. The line absorber is configured to be formed. When X-rays are transmitted through such an X-ray mask, the X-ray transmittance at the portion where the first X-ray absorber, the membrane and the second X-ray absorber overlap is close to 0%, and the membrane and the second X The X-ray transmittance at the overlapped portion of the ray absorber is about 50%, and the transmittance at the membrane-only portion is close to 100%, thus forming a spatial image pattern of a tee or gamma gate on the wafer (not shown). can do. The X-ray masks according to the fourth, fifth and sixth embodiments of the present invention are defined by first and second X-ray absorbers having portions directly corresponding to the footprints and head portions of the tee-type or gamma-type gates. Since it is a hole pattern, the resist applied on the wafer in order to fabricate the tee or gamma gate on the actual wafer must be positive to obtain the tee or gamma gate resist pattern.
    8A to 8C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a seventh embodiment of the present invention.
    Referring to FIG. 8A, a second positive resist 83 and a first positive resist 82 are sequentially applied on the membrane 81. The second positive resist 83 uses a positive resist having better sensitivity to the electron beam than the first positive resist 82.
    Referring to FIG. 8B, the first and second positive resists 82 and 83 are exposed using a high voltage electron beam, and the exposed portions are removed to form the first and second positive resist patterns 82A and 83A. The first positive resist 82 having low sensitivity is removed only a portion directly exposed to the electron beam to form a first positive resist pattern 82A having a narrow open portion, and the second positive resist 83 having high sensitivity has a first positive The portion exposed automatically by the scattered electrons passing through the resist 82 (self-aligned exposure method) is removed to form a second positive resist pattern 83A having a wide open portion. When the acceleration voltage of the electron beam lithography apparatus is 40 kV or more, electron beams pass through the first positive resist 82 and sufficient energy is transferred to the second positive resist 83, so that electron scattering occurs.
    Referring to FIG. 8C, the first and second X-ray absorbers 84 and 85 are integrated into the membrane 81 exposed by the open portions of the first and second positive resist patterns 82A and 83A by electroplating. Is formed. The first and second X-ray absorbers 84 and 85 are made of Au, Ta, W, and the like, and the thickness of each absorber 84 and 85 is such that the X-ray transmittance is about 50%. Thereafter, the first and second positive resist patterns 82A and 83A are removed, and although not shown, a Pyrex ring is formed to form an X-ray mask for forming a tee type gate of the present invention.
    9A to 9C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to an eighth embodiment of the present invention.
    Referring to FIG. 8A, a second positive resist 93 and a first positive resist 92 are sequentially applied on the membrane 91. The second positive resist 93 uses a positive resist having better sensitivity to the electron beam than the first positive resist 92.
    Referring to FIG. 9B, the first and second positive resists 92 and 93 are exposed using high voltage and low voltage electron beams, and the exposed portions are removed to form the first and second positive resist patterns 92A and 93A. The distribution of the high voltage and low voltage electron beams is such that the low voltage electron beam is distributed around the high voltage electron beam so as to be tee type (tee type dose separation exposure method). The low sensitivity first positive resist 92 is not affected by the low voltage electron beam, and only the portion directly exposed to the high voltage electron beam is removed to form a first positive resist pattern 92A having a narrow open portion, and a high sensitivity second positive resist 92. The resist 93 is removed by the portions exposed by the high voltage and low voltage electron beams passing through the first positive resist 92 to form a second positive resist pattern 93A having a wide open portion.
    Referring to FIG. 9C, the first and second X-ray absorbers 94 and 95 are integrated into the membrane 91 exposed to the open portions of the first and second positive resist patterns 92A and 93A by electroplating. Is formed. The first and second X-ray absorbers 94 and 95 are made of Au, Ta, W, and the like, and the thickness of each absorber 94 and 95 is such that the X-ray transmittance is about 50%. Thereafter, the first and second positive resist patterns 92A and 93A are removed, and although not shown, a Pyrex ring is formed to form an X-ray mask for forming a tee-type gate of the present invention.
    10A to 10C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a ninth embodiment of the present invention.
    Referring to FIG. 10A, a second positive resist 103 and a first positive resist 102 are sequentially applied on the membrane 101. The second positive resist 103 uses a positive resist having better sensitivity to the electron beam than the first positive resist 102.
    Referring to FIG. 10B, the first and second positive resists 102 and 103 are exposed using high voltage and low voltage electron beams, and the exposed portions are removed to form the first and second positive resist patterns 102A and 103A. The distribution of the high voltage and low voltage electron beams causes the high voltage electron beam and the low voltage electron beam to be distributed side by side so as to be gamma-type (gamma-type dose separation exposure method). The first positive resist 102 having low sensitivity is not affected by the low voltage electron beam and only the portion directly exposed to the high voltage electron beam is removed to form a first positive resist pattern 102A having a narrow open portion, and the second positive high sensitivity has a high sensitivity. The resist 103 is removed by the portions exposed by the high voltage and low voltage electron beams passing through the first positive resist 102 to form a second positive resist pattern 103A having a wide open portion.
    Referring to FIG. 10C, the first and second X-ray absorbers 104 and 105 are integrated into the membrane 101 which is electroplated to expose the open portions of the first and second positive resist patterns 102A and 103A. Is formed. The first and second X-ray absorbers 104 and 105 are made of Au, Ta, W, and the like, and the thickness of each absorber 104 and 105 is such that the X-ray transmittance is about 50%. Thereafter, the first and second positive resist patterns 102A and 103A are removed, and although not shown, a Pyrex ring is formed to form an X-ray mask for forming a gamma gate of the present invention.
    As described above, the X-ray masks according to the seventh, eighth, and ninth embodiments of the present invention use the first and second positive resists having different sensitivity, and are self-aligned exposure method and tee-type dose-separated exposure method using an electron beam. Or a second X-ray absorber corresponding to the head portion of the T-type or gamma-type gate is formed on the membrane by gamma-type dose-separated exposure, and on the footprint of the T-type or gamma-type gate on the second X-ray absorber And a corresponding first X-ray absorber is formed. When X-rays are transmitted through such an X-ray mask, the X-ray transmittance at the portion where the first X-ray absorber, the second X-ray absorber and the membrane overlap is close to 0%, and the second X-ray The X-ray transmittance at the overlapped portion of the absorber and the membrane is about 50% and the transmittance at the membrane-only portion is close to 100%, forming a spatial image pattern of a tee or gamma gate on the wafer (not shown). can do. The X-ray masks according to the seventh, eighth, and ninth embodiments of the present invention include first and second X-rays in which a portion of the T-type or gamma-type gate that corresponds directly to the footprint and the head portion has a bar pattern. Since it is an absorber, the resist applied on the wafer to fabricate the tee or gamma gate on the actual wafer must use the negative type to obtain the tee or gamma gate resist pattern.
    11A to 11C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a tenth embodiment of the present invention.
    Referring to FIG. 11A, the second negative resist 113 and the first negative resist 112 are sequentially applied on the membrane 111. The second negative resist 113 uses a negative resist having better sensitivity to the electron beam than the first negative resist 112.
    Referring to FIG. 11B, the first and second negative resists 112 and 113 are exposed using a high voltage electron beam, and the unexposed portions are removed to form the first and second negative resist patterns 112A and 113A. The first negative resist 112 having low sensitivity remains only a portion directly exposed to the electron beam to form a first negative resist pattern 112A having a narrow pattern portion, and the second negative resist 113 having high sensitivity has a first negative portion. The portion exposed automatically by the scattered electrons passing through the resist 112 (self-aligned exposure method) is left to form a second negative resist pattern 113A having a wide pattern portion. When the acceleration voltage of the electron beam lithography apparatus is 40 kV or more, electron beams pass through the first negative resist 112 and sufficient energy is transferred to the second negative resist 113, so that electron scattering occurs.
    Referring to FIG. 11C, the first and second X-ray absorbers 114 and 115 are integrally formed on the exposed membrane 111 except for the portions of the first and second negative resist patterns 112A and 113A by electroplating. do. The first and second X-ray absorbers 114 and 115 are made of Au, Ta, W, and the like, and the thickness of each absorber 114 and 115 is such that the X-ray transmittance is about 50%. Thereafter, the first and second negative resist patterns 112A and 113A are removed, and although not shown, a Pyrex ring is formed to form an X-ray mask for forming a tee-type gate of the present invention.
    12A to 12C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to an eleventh embodiment of the present invention.
    Referring to FIG. 12A, a second negative resist 123 and a first negative resist 122 are sequentially applied on the membrane 121. The second negative resist 123 uses a negative resist having better sensitivity to the electron beam than the first negative resist 122.
    Referring to FIG. 12B, the first and second negative resists 122 and 123 are exposed using high voltage and low voltage electron beams, and the unexposed portions are removed to form the first and second negative resist patterns 122A and 123A. . The distribution of the high voltage and low voltage electron beams is such that the low voltage electron beam is distributed around the high voltage electron beam so as to be tee type (tee type dose separation exposure method). The first negative resist 122 having low sensitivity is left unaffected by the low voltage electron beam, leaving only the portion directly exposed to the high voltage electron beam to form the first negative resist pattern 122A having a narrow pattern portion, and the second negative high sensitivity having high sensitivity. The resist 123 remains a portion exposed by the high voltage and low voltage electron beams passing through the first negative resist 122 to form a second negative resist pattern 123A having a wide pattern portion.
    Referring to FIG. 12C, the first and second X-ray absorbers 124 and 125 are integrally formed on the exposed membrane 121 except for the first and second negative resist patterns 122A and 123A by electroplating. do. The first and second X-ray absorbers 124 and 125 are made of Au, Ta, W, and the like, and the thickness of each absorber 124 and 125 is such that the X-ray transmittance is about 50%. Thereafter, the first and second negative resist patterns 122A and 123A are removed, and although not shown, a Pyrex ring is formed to form an X-ray mask for forming a tee type gate of the present invention.
    13A to 13C are cross-sectional views illustrating a method of manufacturing an X-ray mask according to a twelfth embodiment of the present invention.
    Referring to FIG. 13A, a second negative resist 133 and a first negative resist 132 are sequentially applied on the membrane 131. The second negative resist 133 uses a negative resist having better sensitivity to the electron beam than the first negative resist 132.
    Referring to FIG. 13B, the first and second negative resists 132 and 133 are exposed using high voltage and low voltage electron beams, and the unexposed portions are removed to form the first and second negative resist patterns 132A and 133A. . The distribution of the high voltage and low voltage electron beams causes the high voltage electron beam and the low voltage electron beam to be distributed side by side so as to be gamma-type (gamma-type dose separation exposure method). The first negative resist 132 having low sensitivity is left unaffected by the low voltage electron beam, leaving only the portion directly exposed to the high voltage electron beam to form the first negative resist pattern 132A having a narrow pattern portion, and the second negative high sensitivity having high sensitivity. The resist 133 remains a portion exposed by the high voltage and low voltage electron beams passing through the first negative resist 132, thereby forming a second negative resist pattern 133A having a wide pattern portion.
    Referring to FIG. 13C, the first and second X-ray absorbers 134 and 135 are integrally formed on the exposed membrane 131 except for the portions of the first and second negative resist patterns 132A and 133A by electroplating. do. The first and second X-ray absorbers 134 and 135 are made of Au, Ta, W, and the like, and the thickness of each absorber 134 and 135 is such that the X-ray transmittance is about 50%. Thereafter, the first and second negative resist patterns 132A and 133A are removed, and although not shown, a Pyrex ring is formed to form an X-ray mask for forming a gamma gate of the present invention.
    As described above, the X-ray masks according to the tenth, eleventh, and twelfth embodiments of the present invention employ first and second negative resists having different sensitivity, and are self-aligned exposure method and tee-type dose-separated exposure method using electron beams. Or a second X-ray absorber corresponding to the head portion of the T-type or gamma-type gate is formed on the membrane by gamma-type dose-separated exposure, and on the footprint of the T-type or gamma-type gate on the second X-ray absorber And a corresponding first X-ray absorber is formed. When X-rays are transmitted through such an X-ray mask, the X-ray transmittance at the portion where the first X-ray absorber, the second X-ray absorber and the membrane overlap is close to 0%, and the second X-ray The X-ray transmittance at the overlapped portion of the absorber and the membrane is about 50% and the transmittance at the membrane-only portion is close to 100%, forming a spatial image pattern of a tee or gamma gate on the wafer (not shown). can do. The X-ray masks according to the tenth, eleventh, and twelfth embodiments of the present invention are defined by first and second X-ray absorbers having portions directly corresponding to the footprints and head portions of the tee-type or gamma-type gates. Since it is a hole pattern, the resist applied on the wafer in order to fabricate the tee or gamma gate on the actual wafer must use a positive type to obtain a tee or gamma gate resist pattern.
    In manufacturing a conventional tee-type gate, a conventional method is to first form a footprint of a tee-type gate by using an X-ray mask through X-ray lithography and then form a head part by lithography. Therefore, the conventional process is complicated, such as two times of lithography. However, by using the X-ray mask according to the present invention, since the gate having the desired head and footprint can be formed by one X-ray lithography, the process is simplified.
    As described above, the X-ray mask according to the embodiments of the present invention is the thickness of the X-ray absorber corresponding to the foot printer portion of the special gate, such as the tee-type or gamma-type gate and the X-ray absorber corresponding to the head portion By controlling the X-ray transmittance by varying the X-ray transmittance, and fabricating an X-ray mask such that these X-ray absorbers are simultaneously present on the mask substrate, one-time X-ray lithography allows the special gates such as tee and gamma gates to be formed on the wafer. Can be created in.
    权利要求:
    Claims (22)
    [1" claim-type="Currently amended] An X-ray mask comprising a mask substrate made of silicon, a membrane, an X-ray absorber, and a Pyrex ring formed on the back of the mask substrate,
    A first X-ray absorber formed on the membrane and directly corresponding to the footprint of the tee or gamma gate in a bar pattern;
    An X-ray mask formed under the membrane, the second X-ray absorber having a bar pattern in a portion directly corresponding to the head portion of the tee or gamma gate.
    [2" claim-type="Currently amended] The method of claim 1,
    X-ray mask, characterized in that the thickness of each of the first and second X-ray absorber is formed so that the X-ray transmittance is about 50%.
    [3" claim-type="Currently amended] The method of claim 1,
    And the first X-ray absorber and the second X-ray absorber are formed to overlap each other with the membrane interposed therebetween.
    [4" claim-type="Currently amended] An X-ray mask comprising a mask substrate made of silicon, a membrane, an X-ray absorber, and a Pyrex ring formed on the back side of the mask substrate,
    A first X-ray absorber formed on the membrane, the first X-ray absorber formed to form a hole pattern directly corresponding to the footprint of the tee or gamma gate;
    And a second X-ray absorber formed under the membrane, the second X-ray absorber being formed to form a hole pattern directly corresponding to the head portion of the tee or gamma gate.
    [5" claim-type="Currently amended] The method of claim 4, wherein
    X-ray mask, characterized in that the thickness of each of the first and second X-ray absorber is formed so that the X-ray transmittance is about 50%.
    [6" claim-type="Currently amended] The method of claim 4, wherein
    And the hole pattern defined by the first X-ray absorber and the hole pattern defined by the second X-ray absorber are formed to overlap each other with the membrane interposed therebetween.
    [7" claim-type="Currently amended] An X-ray mask comprising a mask substrate made of silicon, a membrane, an X-ray absorber, and a Pyrex ring formed on the back of the mask substrate,
    A second X-ray absorber formed on the membrane and directly corresponding to the head portion of the tee or gamma gate in a bar pattern;
    An X-ray mask formed on the second X-ray absorber, the portion directly corresponding to the footprint of the tee-type or gamma-type gate comprising a first X-ray absorber in a bar pattern.
    [8" claim-type="Currently amended] The method of claim 7, wherein
    X-ray mask, characterized in that the thickness of each of the first and second X-ray absorber is formed so that the X-ray transmittance is about 50%.
    [9" claim-type="Currently amended] An X-ray mask comprising a mask substrate made of silicon, a membrane, an X-ray absorber, and a Pyrex ring formed on the back side of the mask substrate,
    A second X-ray absorber formed on the membrane, the second X-ray absorber formed so that a portion corresponding to the head portion of the tee or gamma gate becomes a hole pattern
    And a first X-ray absorber formed on the second X-ray absorber, the first X-ray absorber formed to form a hole pattern directly corresponding to the footprint of the tee or gamma gate.
    [10" claim-type="Currently amended] The method of claim 9,
    X-ray mask, characterized in that the thickness of each of the first and second X-ray absorber is formed so that the X-ray transmittance is about 50%.
    [11" claim-type="Currently amended] The method of claim 9,
    And a hole pattern defined by the first X-ray absorber and a hole pattern defined by the second X-ray absorber.
    [12" claim-type="Currently amended] Providing a substrate on which a membrane is formed;
    Applying a low sensitivity first positive resist on the membrane and a second positive resist having excellent sensitivity on the bottom of the membrane;
    The first and second positive resists are exposed by any one of a self-aligned exposure method using an electron beam, a tee type dose separation exposure method, and a gamma type dose separation exposure method, and the exposed portions are removed to remove the first and second positive resists. Forming a pattern;
    Electroplating is performed to form a first X-ray absorber in a bar pattern on a portion directly corresponding to the footprint of the tee or gamma gate on the membrane, and the head of the tee or gamma gate on the membrane bottom. Forming a second X-ray absorber in which a portion directly corresponding to the portion is in a bar pattern;
    And removing the first and second positive resist patterns to form a Pyrex ring on the back side of the substrate.
    [13" claim-type="Currently amended] The method of claim 12,
    Wherein the thickness of each of the first and second X-ray absorbers is formed such that the X-ray transmittance is about 50%.
    [14" claim-type="Currently amended] The method of claim 12,
    And the first X-ray absorber and the second X-ray absorber are formed to overlap each other with the membrane interposed therebetween.
    [15" claim-type="Currently amended] Providing a substrate on which a membrane is formed;
    Applying a low sensitivity first negative resist on the membrane and applying a high sensitivity second negative resist on the bottom of the membrane;
    The first and second negative resists are exposed by any one of a self-aligned exposure method using an electron beam, a tee type dose separation exposure method, and a gamma type dose separation exposure method, and the unexposed portions are removed to remove the first and second negatives. Forming a resist pattern;
    Electroplating is performed to form a first X-ray absorber in a hole pattern in the portion directly corresponding to the footprint of the tee or gamma gate on the membrane, and the head of the tee or gamma gate on the membrane bottom. Forming a second X-ray absorber in which a portion directly corresponding to the portion is in a hole pattern;
    And removing the first and second positive resist patterns to form a Pyrex ring on the back side of the substrate.
    [16" claim-type="Currently amended] The method of claim 15,
    Wherein the thickness of each of the first and second X-ray absorbers is formed such that the X-ray transmittance is about 50%.
    [17" claim-type="Currently amended] The method of claim 15,
    The hole pattern defined by the first X-ray absorber and the hole pattern defined by the second X-ray absorber are formed to overlap each other with the membrane interposed therebetween.
    [18" claim-type="Currently amended] Providing a substrate on which a membrane is formed;
    Applying a high sensitivity second positive resist on the membrane and applying a low sensitivity first positive resist on the second positive resist;
    The first and second positive resists are exposed by any one of a self-aligned exposure method using an electron beam, a tee type dose separation exposure method, and a gamma type dose separation exposure method, and the exposed portions are removed to remove the first and second positive resists. Forming a pattern;
    Electroplating is performed to form a second X-ray absorber in a bar pattern on a portion directly corresponding to the head portion of the tee or gamma gate on the membrane, and a tee or gamma on the second X-ray absorber. Forming a first X-ray absorber in which a portion directly corresponding to the footprint portion of the type gate is in a bar pattern;
    And removing the first and second positive resist patterns to form a Pyrex ring on the back side of the substrate.
    [19" claim-type="Currently amended] The method of claim 18,
    Wherein the thickness of each of the first and second X-ray absorbers is formed such that the X-ray transmittance is about 50%.
    [20" claim-type="Currently amended] Providing a substrate on which a membrane is formed;
    Applying a high sensitivity second negative resist on the membrane, and applying a low sensitivity first negative resist on the second negative resist;
    The first and second negative resists are exposed by any one of a self-aligned exposure method using an electron beam, a tee type dose separation exposure method, and a gamma type dose separation exposure method, and the unexposed portions are removed to remove the first and second negatives. Forming a resist pattern;
    Electroplating is performed to form a second X-ray absorber in a hole pattern in a portion directly corresponding to the head portion of the tee or gamma gate on the membrane, and a tee or gamma on the second X-ray absorber. Forming a first X-ray absorber in which a portion directly corresponding to the footprint portion of the type gate is in a hole pattern;
    After removing the first and second negative resist patterns, forming a Pyrex ring on the back side of the substrate.
    [21" claim-type="Currently amended] The method of claim 20,
    Wherein the thickness of each of the first and second X-ray absorbers is formed such that the X-ray transmittance is about 50%.
    [22" claim-type="Currently amended] The method of claim 20,
    The hole pattern defined by the first X-ray absorber and the hole pattern defined by the second X-ray absorber are formed to overlap.
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    同族专利:
    公开号 | 公开日
    KR100246545B1|2000-06-01|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1997-10-23|Application filed by 정선종, 한국전자통신연구원
    1997-10-23|Priority to KR1019970054427A
    1999-05-15|Publication of KR19990033158A
    2000-06-01|Application granted
    2000-06-01|Publication of KR100246545B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019970054427A|KR100246545B1|1997-10-23|1997-10-23|X-ray mask and method of manufacturing the same|
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